Mg-doping and free-hole properties of hot-wall MOCVD GaN

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the incorporation in a wide range ([Formula: see text] cm −3 up [Formula: ) demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant levels are discussed view Ga supersaturation, which provides unified concept explain complexity conditions impact on acceptor compensation. results analyzed relation extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, surface morphology, correlation electrical properties obtained Hall effect capacitance–voltage (C–V) measurements. This allows establish comprehensive picture MOCVD providing guidance parameters optimization depending targeted application. show that substantially lower H concentration as compared acceptors can be achieved without any situ or post-growth annealing resulting p-type conductivity as-grown material. State-of-the-art text]-GaN layers resistivity free-hole density (0.77 cm[Formula: text], respectively) after demonstrating viability power electronic device structures.